Silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FINFET and forming method thereof

ABSTRACT

A silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET includes a fin, a control gate and a selective metal gate. The fin is on a top surface of a substrate, wherein the fin has two sidewalls and a top surface, and the fin includes a memory region and a logic region. The control gate is disposed over the fin of the memory region and covers the two sidewalls and the top surface of the fin, wherein the control gate includes a charge trapping layer and a control electrode, wherein the charge trapping layer is sandwiched by the fin and the control electrode. The selective metal gate is disposed over the fin adjacent to the control gate and covers the two sidewalls and the top surface of the fin. The present invention also provides a method of forming said silicon-oxide-nitride-oxide-silicon (SONOS) memory cell.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates generally to a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell and forming method thereof, and more specifically to a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET and forming method thereof.

2. Description of the Prior Art

Memory is divided into two categories: volatile memory and non-volatile memory. In nowadays, the two important types of volatile memory are static random access memory (SRAM) and dynamic random access memory (DRAM). There are many types of non-volatile memory. Flash memory is the most popular type, and other types may include silicon-oxide-nitride-oxide-silicon (SONOS), ferroelectric random access memory (FRAM), phase-change random access memory (PRAM), magnetoresistive access memory (MRAM) and resistive random access memory (RRAM).

SUMMARY OF THE INVENTION

The present invention provides a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET and forming method thereof, which forms a control gate in a memory region, and then forms a selective gate in the memory region and a gate in a logic region at a same time, and therefore integrates memory processes into logic processes.

The present invention provides a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET including a fin, a control gate and a selective metal gate. The fin is on a top surface of a substrate, wherein the fin has two sidewalls and a top surface, and the fin includes a memory region and a logic region. The control gate is disposed over the fin of the memory region and covers the two sidewalls and the top surface of the fin, wherein the control gate includes a charge trapping layer and a control electrode, wherein the charge trapping layer is sandwiched by the fin and the control electrode. The selective metal gate is disposed over the fin adjacent to the control gate and covers the two sidewalls and the top surface of the fin.

The present invention provides a method of forming a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET including the following steps. A fin is formed on a top surface of a substrate, wherein the fin comprises a memory region and a logic region. A charge trapping material and a control gate material are sequentially deposited to cover the fin and the substrate blanketly. The control gate material and the charge trapping material are patterned to form a charge trapping layer and a control electrode over the fin of the memory region. A dielectric layer and a gate electrode layer are sequentially deposited to cover the fin and the substrate blanketly. The gate electrode layer and the dielectric layer are patterned to form a gate in the logic region and a selective gate in the memory region adjacent to the control gate. The selective gate and the gate are replaced by a selective metal gate and a metal gate respectively.

According to the above, the present invention provides a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET and forming method thereof. The method forms a fin on a substrate of a memory region and a logic region; sequentially deposits and patterns a charge trapping material and a control gate material covering the fin and the substrate, thereby forming a control gate; sequentially deposits and patterns a dielectric layer and a gate electrode layer covering the fin and the substrate, to form a gate in the logic region and a selective gate in the memory region adjacent to the control gate; and replaces the selective gate and the gate by a selective metal gate and a metal gate respectively. Hence, memory components and logic components can be formed on the fin at a same time.

These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 schematically depicts a three-dimensional diagram of a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to an embodiment of the present invention.

FIG. 2 schematically depicts a cross-sectional view of a method of forming a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to an embodiment of the present invention.

FIG. 3 schematically depicts a cross-sectional view of a method of forming a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to an embodiment of the present invention.

FIG. 4 schematically depicts a cross-sectional view of a method of forming a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to an embodiment of the present invention.

FIG. 5 schematically depicts a cross-sectional view of a method of forming a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to an embodiment of the present invention.

FIG. 6 schematically depicts a cross-sectional view of a method of forming a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to an embodiment of the present invention.

FIG. 7 schematically depicts a cross-sectional view of a method of forming a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to an embodiment of the present invention.

FIG. 8 schematically depicts a cross-sectional view of a method of forming a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to an embodiment of the present invention.

FIG. 9 schematically depicts a cross-sectional view of a method of forming a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to an embodiment of the present invention.

FIG. 10 schematically depicts a cross-sectional view of a method of forming a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to an embodiment of the present invention.

DETAILED DESCRIPTION

FIG. 1 schematically depicts a three-dimensional diagram of a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to an embodiment of the present invention. As shown in FIG. 1 , a fin 112 is located on a top surface T1 of a substrate 110. The substrate 110 may be a semiconductor substrate such as a silicon substrate, a silicon containing substrate, a III-V group-on-silicon (such as GaN-on-silicon) substrate, a graphene-on-silicon substrate or a silicon-on-insulator (SOI) substrate. The fin 112 has two sidewalls S1 and a top surface T2.In this embodiment, the fin 112 includes a memory region A and a logic region B, but it is not limited thereto. An isolation structure 10 is located on the substrate 110 beside the fin 112. The isolation structure 10 may be a shallow trench isolation (STI) structure, which is formed by a shallow trench isolation (STI) process, but it is not restricted thereto.

A control gate 120 is disposed on the fin 112 of the memory region A and covers a top surface T2 and two sidewalls S1 of the fin 112. The control gate 120 includes a charge trapping layer 122 and a control electrode 124, and the charge trapping layer 122 is sandwiched by the fin 112 and the control electrode 124. In this embodiment, the control electrode 124 may include a polysilicon electrode, and the charge trapping layer 122 may include an oxide-nitride-oxide (ONO) layer, but it is not limited thereto.

In the memory region A, a selective metal gate 130 a is disposed on the fin 112 adjacent to the control gate 120, and covers the top surface T2 and the two sidewalls S1 of the fin 112. In the logic region B, a metal gate 130 b is disposed on the fin 112 of the logic region B. The selective metal gate 130 a and the metal gate 130 b are formed by one same process and have same materials, but it is not limited thereto. In a preferred embodiment, the selective metal gate 130 a and the metal gate 130 b both include gate oxide layers 132 a/ 132 b and gate electrode layers 134 a/ 134 b. In a still preferred embodiment, a height h1 of the selective metal gate 130 a is common to a height h2 of the metal gate 130 b, to integrate memory processes into logic processes, and to simplify the formed structure.

In this case, the gate electrode layer 134 a is constituted by metals such as copper or aluminum etc, and the control electrode 124 is a polysilicon electrode, and the height h1 of the selective metal gate 130 a is higher than a height h3 of the control gate 120, or a top surface T3 of the selective metal gate 130 a is higher than a top surface T4 of the control gate 120. Furthermore, an insulator 20 separates the selective metal gate 130 a from the control gate 120, wherein the insulator 20 and the gate oxide layers 132 a/ 132 b are preferably composed of same materials, thereby the insulator 20 and the gate oxide layer 132 a is one piece with a U-shape cross-sectional profile, but it is not limited thereto.

A method of forming a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET is presented as follows.

FIGS. 2-10 schematically depict cross-sectional views of a method of forming a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to an embodiment of the present invention. FIGS. 2-10 are cross-sectional views along line C1C1′ of FIG. 1 , line C11C11′ of FIG. 1 , and line C2C2′ of FIG. 1 . FIGS. 2-10 include more details for illustrating the present invention clearly. As shown in FIG. 2 , fins 212 are formed on a top surface T11 of a substrate 210. In this embodiment, the substrate 210 may include a memory region A1 and a logic region B1, but it is not limited thereto. Methods of forming the fins 212 may include a sidewall image transfer (SIT) method, but it is not restricted thereto. For instance, a bulk substrate (not shown) is provided, spacer patterns are formed on the bulk substrate, and the spacer patterns are transferred into the bulk substrate by etching processes, thereby the fins 212 being formed on the top surface T11 of the substrate 210. Thereafter, the spacer patterns are removed. Due to the fins 212 and the substrate 210 being formed by one single bulk substrate, the fins 212 and the substrate 210 are one piece.

Isolation structures 10 a are formed on the substrate 210 between the fins 212. The isolation structures 10 a may be shallow trench isolation (STI) structures, which is formed by a shallow trench isolation (STI) process, but it is not restricted thereto. More precisely, an oxide layer (not shown) may be deposited to cover the fins 212 and the substrate 210, a chemical mechanical polishing (CMP) process may be performed to remove the oxide layer higher than the fins 212, and then a wet etching process is performed to etch back the oxide layer, to form the isolation structures 10 a between the fins 212.

A charge trapping layer 220 is deposited to conformally cover the fins 212 and the substrate 210. In this case, the charge trapping layer 220 is an oxide-nitride-oxide (ONO) layer including a bottom oxide layer 222, a nitride layer 224 and an oxide layer 226 stacked from bottom to top, but it is not restricted thereto.

As shown in FIG. 3 , a control gate material 232 and a hard mask 234 are deposited sequentially and blanketly to cover the fins 212 and the substrate 210. Then, the hard mask 234, the control gate material 232 and the charge trapping layer 220 are patterned to form a pre-charge trapping layer 220 a, a control electrode 232 a and a hard mask 234 a on the fins 212 of the memory region A1, as shown in FIG. 4 . In the patterning steps, the bottom oxide layer 222 of the charge trapping layer 220 serves as an etching stop layer, so that only the oxide layer 224 and the nitride layer 226 of the charge trapping layer 220 are etched, and the bottom oxide layer 222 is reserved to form the pre-charge trapping layer 220 a.

Thereafter, an oxide strip process P1 is performed to remove an exposed part E of the bottom oxide layer 222, but remain a nitride layer 226 a, an oxide layer 224 a and a nitride layer 222 a right below the control electrode 232 a to constitute a charge trapping layer 220 b, as shown in FIGS. 4-5 . The charge trapping layer 220 b and the control electrode 232 a constitute a control gate C.

FIG. 6(a) are cross-sectional views along line C1C1′ of FIG. 1 , line C11C11′ of FIG. 1 , and line C2C2′ of FIG. 1 , and FIG. 6(b) are cross-sectional views along line D1D1′ of FIG. 1 and line D2D2′ of FIG. 1 . As shown in FIG. 6 , a dielectric layer 240 is deposited blanketly to cover the fins 212 and the substrate 210. The dielectric layer 240 may include a buffer layer 242, a high-k dielectric layer 244 and a selective barrier layer 246, but it is not restricted thereto. The buffer layer 242 may be an oxide layer, which may be formed by a thermal oxide process; the high-k dielectric layer 244 may include a metal containing dielectric layer, which may be hafnium oxide or zirconium oxide. The high-k dielectric layer 244 may be the group selected from hafnium oxide (HfO₂), hafnium silicon oxide (HfSiO₄), hafnium silicon oxynitride (HfSiON), aluminum oxide (Al₂O₃), lanthanum oxide (La₂O₃), tantalum oxide (Ta₂O₅), yttrium oxide (Y₂O₃), zirconium oxide (ZrO₂), strontium titanate oxide (SrTiO₃), zirconium silicon oxide (ZrSiO₄), hafnium zirconium oxide (HfZrO₄), strontium bismuth tantalite (SrBi₂Ta₂O₉, SBT), lead zirconate titanate (PbZr_(x)Ti_(1-x)O₃, PZT) and barium strontium titanate (Ba_(x)Sr_(1-x)TiO₃, BST). The selective barrier layer 246 may be composed of titanium (Ti), titanium nitride (TiN), tantalum (Ta) or tantalum nitride (TaN) etc.

FIG. 7(a) are cross-sectional views along line C1C1′ of FIG. 1 , line C11C11′ of FIG. 1 , and line C2C2′ of FIG. 1 , and FIG. 7(b) are cross-sectional views along line D1D1′ of FIG. 1 and line D2D2′ of FIG. 1 . As shown in FIG. 7 , a gate electrode layer 250 is deposited blanketly to cover the dielectric layer 240 covering the fins 212 and the substrate 210. In one embodiment, methods of forming the gate electrode layer 250 may include the following. Agate electrode layer (not shown) is deposited blanketly to cover the fins 212 and the substrate 210, and then the gate electrode layer is planarized by methods such as a chemical mechanical polishing (CMP) process until the hard mask 234 a is exposed to form the gate electrode layer 250 having a flat top surface T5. In one case, a part of the hard mask 234 a is removed while planarizing.

FIG. 8(a) are cross-sectional views along line C1C1′ of FIG. 1 , line C11C11′ of FIG. 1 , and line C2C2′ of FIG. 1 , and FIG. 8(b) are cross-sectional views along line D1D1′ of FIG. 1 and line D2D2′ of FIG. 1 . Please refer to FIGS. 7-8 , the gate electrode layer 250 and the dielectric layer 240 are patterned to form a selective gate C1 in the memory region A1 adjacent to the control electrode 232 a, and a gate C2 in the logic region B1. More precisely, as shown in FIG. 7 , a patterned photoresist Q is formed to cover the gate electrode layer 250, and the gate electrode layer 250 and the dielectric layer 240 are patterned to form a selective gate electrode 250 a and a gate oxide layer 240 a in the memory region A1 adjacent to the control electrode 232 a, and to form a gate electrode 250 b and a gate oxide layer 240 b in the logic region B1, as shown in FIG. 8 . The selective gate electrode 250 a and the gate oxide layer 240 a constitute the selective gate C1, and the gate electrode 250 b and the gate oxide layer 240 b constitute the gate C2. Thereafter, the patterned photoresist Q is removed. Therefore, the selective gate C1 and the gate C2 are form at a same time. In this embodiment, a part of the hard mask 234 a being exposed is removed while patterning the gate electrode layer 250 and the dielectric layer 240, to form a hard mask 234 b.

FIG. 9 are cross-sectional views along line D1D1′ of FIG. 1 and line D2D2′ of FIG. 1 . As shown in FIG. 9 , spacers 262 a are formed on the substrate 210 beside the selective gate electrode 250 a and the control electrode 232 a, and spacers 262 b are formed on the substrate 210 beside the gate electrode 250 b simultaneously. Source/drain regions 264 a/ 264 b are formed in the fins 212 beside the selective gate 250 a, the control gate 232 a and the gate electrode 250 b, and then the hard mask 234 b above the control gate 232 a is etched to expose a part of the control electrode 232 a and remain a hard mask 234 c. Thereafter, metal silicides 264 c are formed on the source/drain regions 264 a/ 264 b and the control electrode 232 a by forming metal and performing an annealing process.

FIG. 10 are cross-sectional views along line D1D1′ of FIG. 1 and line D2D2′ of FIG. 1 . As shown in FIG. 10 , the selective gate electrode 250 a and the gate electrode 250 b are replaced by a selective metal gate electrode M11 and a metal gate M2 by performing a metal gate replacement process. More precisely, a depositing process and a planarization process are performed to form a contact etching stop layer 272 and an interlayer dielectric layer 274 on the substrate 210 beside the control electrode 232 a, the selective gate electrode 250 a and the gate electrode 250 b; the selective gate electrode 250 a and the gate electrode 250 b are removed to form recesses (not shown); then, the selective metal gate electrode M11 and the metal gate M2 fill into the recesses. Thus, a height h4 of a selective metal gate M1 is higher than a height h5 of a control gate M3.

To summarize, the present invention provides a silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET and forming method thereof. The method forms a fin on a substrate of a memory region and a logic region; sequentially deposits and patterns a charge trapping material and a control gate material covering the fin and the substrate blanketly, thereby forming a charge trapping layer and a control electrode; sequentially deposits and patterns a dielectric layer and a gate electrode layer covering the fin and the substrate blanketly, to form a gate in the logic region and a selective gate in the memory region adjacent to the control gate; and replaces the selective gate and the gate by a selective metal gate and a metal gate respectively. Hence, memory components and logic components can be formed on the fin at a same time, and memory processes integrate into logic processes. The control electrode of the present invention may include polysilicon, and the selective metal gate and the metal gate may include same materials.

Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims. 

What is claimed is:
 1. A silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET, comprising: a fin on a top surface of a substrate, wherein the fin has two sidewalls and a top surface, and the fin comprises a memory region and a logic region; a control gate disposed over the fin of the memory region and covering the two sidewalls and the top surface of the fin, wherein the control gate comprises a charge trapping layer and a control electrode, wherein the charge trapping layer is sandwiched by the fin and the control electrode; a selective metal gate disposed over the fin adjacent to the control gate and covering the two sidewalls and the top surface of the fin, the selective metal gate comprising a gate oxide layer; and an insulator, disposed between the selective metal gate and the control gate, to separate the selective metal gate from the control gate, wherein the insulator and the gate oxide layer are in one piece with a L-shape, and the insulator directly contacts a sidewall of the control electrode.
 2. The silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to claim 1, further comprising: a metal gate disposed over the fin of the logic region.
 3. The silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to claim 1, wherein the control gate comprises a polysilicon gate.
 4. The silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to claim 1, wherein the charge trapping layer comprises an oxide-nitride-oxide (ONO) layer.
 5. The silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to claim 2, wherein a height of the selective metal gate is common to a height of the metal gate in the logic region.
 6. The silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to claim 1, wherein a height of the selective metal gate is higher than a height of the control gate.
 7. The silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to claim 2, wherein the metal gate comprises a gate oxide layer.
 8. The silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFET according to claim 7, wherein the insulator and the gate oxide layers of the metal gate and the selective metal gate have same materials. 